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功率MOS

產(chǎn)品展示MOSFET功率MOS

NCE12P09S

NCE12P09S

Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -12V,ID = -9A RDS(ON) < 22m? @ VGS=-2.5V RDS(ON) < 18m? @ VGS=-4.5V ● Advanced trench MOSFET process techno

Description The NCE12P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. 

General Features 

● VDS = -12V,ID = -9A RDS(ON) < 22mΩ @ VGS=-2.5V 

RDS(ON) < 18mΩ @ VGS=-4.5V 

● Advanced trench MOSFET process technology 

● Ultra low on-resistance with low gate charge Application

 ● PWM applications 

● Load switch 

● Battery charge in cellular handset


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